KTA1045D-GR Bipolar Transistor

Characteristics of KTA1045D-GR Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 8 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 130 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of KTA1045D-GR

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTA1045D-GR transistor can have a current gain of 160 to 320. The gain of the KTA1045D will be in the range from 100 to 320, for the KTA1045D-Y it will be in the range from 100 to 200.

SMD Version of KTA1045D-GR transistor

The 2SB806 (SOT-89) and 2SD1007 (SOT-89) is the SMD version of the KTA1045D-GR transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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