KSE5020-Y Bipolar Transistor
Characteristics of KSE5020-Y Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 500 V
- Collector-Base Voltage, max: 800 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 3 A
- Collector Dissipation: 30 W
- DC Current Gain (hfe): 30 to 50
- Transition Frequency, min: 18 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
Pinout of KSE5020-Y
Classification of hFE
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