KSE5020-R Bipolar Transistor

Characteristics of KSE5020-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 500 V
  • Collector-Base Voltage, max: 800 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 15 to 30
  • Transition Frequency, min: 18 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of KSE5020-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSE5020-R transistor can have a current gain of 15 to 30. The gain of the KSE5020 will be in the range from 15 to 50, for the KSE5020-O it will be in the range from 20 to 40, for the KSE5020-Y it will be in the range from 30 to 50.
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