KSE13003H3 Bipolar Transistor

Characteristics of KSE13003H3 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 700 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 19 to 26
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of KSE13003H3

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSE13003H3 transistor can have a current gain of 19 to 26. The gain of the KSE13003 will be in the range from 8 to 40, for the KSE13003H1 it will be in the range from 9 to 16, for the KSE13003H2 it will be in the range from 14 to 21.

Marking

The KSE13003H3 transistor is marked as "E13003-3".

Replacement and Equivalent for KSE13003H3 transistor

You can replace the KSE13003H3 with the KSE5020 or KSE5020-R.
If you find an error please send an email to mail@el-component.com