KSD363 Bipolar Transistor
Characteristics of KSD363 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 120 V
- Collector-Base Voltage, max: 300 V
- Emitter-Base Voltage, max: 8 V
- Collector Current − Continuous, max: 6 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 40 to 240
- Transition Frequency, min: 10 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
- Electrically Similar to the Popular 2SD363 transistor
Pinout of KSD363
Classification of hFE
Replacement and Equivalent for KSD363 transistor
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