KSC5026M-R Bipolar Transistor
Characteristics of KSC5026M-R Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 800 V
- Collector-Base Voltage, max: 1100 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 1.5 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 15 to 30
- Transition Frequency, min: 15 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
- Electrically Similar to the Popular KSC5026-R transistor
Pinout of KSC5026M-R
Classification of hFE
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