KSC5026M-O Bipolar Transistor

Characteristics of KSC5026M-O Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 800 V
  • Collector-Base Voltage, max: 1100 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 20 to 40
  • Transition Frequency, min: 15 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular KSC5026-O transistor

Pinout of KSC5026M-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSC5026M-O transistor can have a current gain of 20 to 40. The gain of the KSC5026M will be in the range from 10 to 40, for the KSC5026M-N it will be in the range from 10 to 20, for the KSC5026M-R it will be in the range from 15 to 30.
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