BD530 Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -100 V
• Collector-Base Voltage, max: -100 V
• Emitter-Base Voltage, max: -4 V
• Collector Current − Continuous, max: -2 A
• Collector Dissipation: 8 W
• DC Current Gain (h_fe): 30
• Transition Frequency, min: 100 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-202

Here is an image showing the pin diagram of this transistor.The complementary NPN transistor to the BD530 is the BD529.