BD529 Bipolar Transistor

Characteristics of BD529 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 4 V
  • Collector Current − Continuous, max: 2 A
  • Collector Dissipation: 8 W
  • DC Current Gain (hfe): 30
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-202

Pinout of BD529

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BD529 is the BD530.

SMD Version of BD529 transistor

The FMMT624 (SOT-23) and FZT694B (SOT-223) is the SMD version of the BD529 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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