BD519 Bipolar Transistor

Characteristics of BD519 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 4 V
  • Collector Current − Continuous, max: 2 A
  • Collector Dissipation: 8 W
  • DC Current Gain (hfe): 60 to 350
  • Transition Frequency, min: 160 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-202

Pinout of BD519

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BD519 is the BD520.

Replacement and Equivalent for BD519 transistor

You can replace the BD519 with the BD527, BD529 or NTE188.
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