BC169 Bipolar Transistor

Characteristics of BC169 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 20 V
  • Collector-Base Voltage, max: 30 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 0.3 W
  • DC Current Gain (hfe): 110 to 800
  • Transition Frequency, min: 250 MHz
  • Noise Figure, max: 1.5 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of BC169

The BC169 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC169 transistor can have a current gain of 110 to 800. The gain of the BC169A will be in the range from 110 to 220, for the BC169B it will be in the range from 200 to 450, for the BC169C it will be in the range from 420 to 800.

Complementary PNP transistor

The complementary PNP transistor to the BC169 is the BC259.

SMD Version of BC169 transistor

The MMBTH10 (SOT-23) is the SMD version of the BC169 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BC169 transistor

You can replace the BC169 with the 2N3394 or BC168.
If you find an error please send an email to mail@el-component.com