BC109B Bipolar Transistor

Characteristics of BC109B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 20 V
  • Collector-Base Voltage, max: 30 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 0.3 W
  • DC Current Gain (hfe): 200 to 450
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1.5 dB
  • Operating and Storage Junction Temperature Range: -65 to +175 °C
  • Package: TO-18

Pinout of BC109B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC109B transistor can have a current gain of 200 to 450. The gain of the BC109 will be in the range from 200 to 800, for the BC109C it will be in the range from 420 to 800.

Complementary PNP transistor

The complementary PNP transistor to the BC109B is the BC179B.

SMD Version of BC109B transistor

The MMBTH10 (SOT-23) is the SMD version of the BC109B transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BC109B transistor

You can replace the BC109B with the BC108 or BC108B.
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