BC108B Bipolar Transistor

Characteristics of BC108B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 20 V
  • Collector-Base Voltage, max: 30 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 0.3 W
  • DC Current Gain (hfe): 200 to 450
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +175 °C
  • Package: TO-18

Pinout of BC108B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC108B transistor can have a current gain of 200 to 450. The gain of the BC108 will be in the range from 110 to 800, for the BC108A it will be in the range from 110 to 220, for the BC108C it will be in the range from 420 to 800.

Complementary PNP transistor

The complementary PNP transistor to the BC108B is the BC178B.

SMD Version of BC108B transistor

The MMBTH10 (SOT-23) is the SMD version of the BC108B transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BC108B transistor

You can replace the BC108B with the BC109 or BC109B.
If you find an error please send an email to mail@el-component.com