2SD965R Bipolar Transistor

Characteristics of 2SD965R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 20 V
  • Collector-Base Voltage, max: 40 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 0.75 W
  • DC Current Gain (hfe): 340 to 600
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SD965R

The 2SD965R is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD965R transistor can have a current gain of 340 to 600. The gain of the 2SD965 will be in the range from 230 to 600, for the 2SD965Q it will be in the range from 230 to 380.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD965R might only be marked "D965R".

Replacement and Equivalent for 2SD965R transistor

You can replace the 2SD965R with the KTD1146.
If you find an error please send an email to mail@el-component.com