2SD965Q Bipolar Transistor
Characteristics of 2SD965Q Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 20 V
- Collector-Base Voltage, max: 40 V
- Collector Current − Continuous, max: 5 A
- Collector Dissipation: 0.75 W
- DC Current Gain (hfe): 230 to 380
- Transition Frequency, min: 150 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Pinout of 2SD965Q
Here is an image showing the pin diagram of this transistor.
Classification of hFE
Marking
Replacement and Equivalent for 2SD965Q transistor
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