2SD867 Bipolar Transistor
Characteristics of 2SD867 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 110 V
- Collector-Base Voltage, max: 130 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 10 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 50 to 200
- Operating and Storage Junction Temperature Range: -65 to +175 °C
- Package: TO-3
Pinout of 2SD867
Marking
Replacement and Equivalent for 2SD867 transistor
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