2SD809-F Bipolar Transistor

Characteristics of 2SD809-F Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 300 to 480
  • Transition Frequency, min: 85 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD809-F

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD809-F transistor can have a current gain of 300 to 480. The gain of the 2SD809 will be in the range from 135 to 600, for the 2SD809-E it will be in the range from 360 to 600, for the 2SD809-K it will be in the range from 200 to 400, for the 2SD809-L it will be in the range from 135 to 270.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD809-F might only be marked "D809-F".

Replacement and Equivalent for 2SD809-F transistor

You can replace the 2SD809-F with the 2SD1348, 2SD1348-U, 2SD1682, 2SD1682-U, 2SD1683, 2SD1683-U, BD167, BD169, BD189, BD235, BD235G, BD237, BD237G, MJE225, MJE242, MJE244, MJE721 or MJE722.
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