2SD809 Bipolar Transistor

Characteristics of 2SD809 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 135 to 600
  • Transition Frequency, min: 85 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD809

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD809 transistor can have a current gain of 135 to 600. The gain of the 2SD809-E will be in the range from 360 to 600, for the 2SD809-F it will be in the range from 300 to 480, for the 2SD809-K it will be in the range from 200 to 400, for the 2SD809-L it will be in the range from 135 to 270.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD809 might only be marked "D809".

Replacement and Equivalent for 2SD809 transistor

You can replace the 2SD809 with the BD167, BD169, BD189, BD235, BD235G, BD237, BD237G, MJE225, MJE242, MJE244, MJE721 or MJE722.
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