2SD1712 Bipolar Transistor

Characteristics of 2SD1712 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 60 to 200
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SD1712

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1712 transistor can have a current gain of 60 to 200. The gain of the 2SD1712-P will be in the range from 100 to 200, for the 2SD1712-Q it will be in the range from 60 to 120, for the 2SD1712-S it will be in the range from 80 to 160.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1712 might only be marked "D1712".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1712 is the 2SB1157.

SMD Version of 2SD1712 transistor

The BDP953 (SOT-223) is the SMD version of the 2SD1712 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD1712 transistor

You can replace the 2SD1712 with the 2SC2681, 2SD1485, 2SD1486, 2SD1487, 2SD1488, 2SD1713, 2SD1714, 2SD1715 or 2SD1716.
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