2SD1486 Bipolar Transistor

Characteristics of 2SD1486 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 6 A
  • Collector Dissipation: 70 W
  • DC Current Gain (hfe): 40 to 200
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SD1486

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1486 transistor can have a current gain of 40 to 200. The gain of the 2SD1486-P will be in the range from 100 to 200, for the 2SD1486-Q it will be in the range from 60 to 120, for the 2SD1486-R it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1486 might only be marked "D1486".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1486 is the 2SB1055.

SMD Version of 2SD1486 transistor

The BDP955 (SOT-223) is the SMD version of the 2SD1486 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD1486 transistor

You can replace the 2SD1486 with the 2SD1487 or 2SD1488.
If you find an error please send an email to mail@el-component.com