2SD1707-P Bipolar Transistor

Characteristics of 2SD1707-P Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 130 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 20 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 130 to 260
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SD1707-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1707-P transistor can have a current gain of 130 to 260. The gain of the 2SD1707 will be in the range from 90 to 260, for the 2SD1707-Q it will be in the range from 90 to 180.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1707-P might only be marked "D1707-P".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1707-P is the 2SB1156-P.
If you find an error please send an email to mail@el-component.com