2SD1622-T Bipolar Transistor

Characteristics of 2SD1622-T Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SD1622-T

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1622-T transistor can have a current gain of 200 to 400. The gain of the 2SD1622 will be in the range from 100 to 560, for the 2SD1622-R it will be in the range from 100 to 200, for the 2SD1622-S it will be in the range from 140 to 280, for the 2SD1622-U it will be in the range from 280 to 560.

Marking

The 2SD1622-T transistor is marked as "DET".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1622-T is the 2SB1122-T.

Replacement and Equivalent for 2SD1622-T transistor

You can replace the 2SD1622-T with the 2SD1615, 2SD1615-GL, 2SD1615A, 2SD1615A-GP, 2SD1623, 2SD1623-T, 2SD1624, 2SD1624-T, 2STF1360 or 2STF1550.
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