2SD1616A Bipolar Transistor

Characteristics of 2SD1616A Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.75 W
  • DC Current Gain (hfe): 135 to 400
  • Transition Frequency, min: 160 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SD1616A

The 2SD1616A is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1616A transistor can have a current gain of 135 to 400. The gain of the 2SD1616A-K will be in the range from 200 to 400, for the 2SD1616A-L it will be in the range from 135 to 270, for the 2SD1616A-U it will be in the range from 300 to 600.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1616A might only be marked "D1616A".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1616A is the 2SB1116A.

SMD Version of 2SD1616A transistor

The 2SD1615A (SOT-89) is the SMD version of the 2SD1616A transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

2SD1616A Transistor in TO-92 Package

The KSD1616A is the TO-92 version of the 2SD1616A.

Replacement and Equivalent for 2SD1616A transistor

You can replace the 2SD1616A with the KSD1616A.
If you find an error please send an email to mail@el-component.com