Characteristics of 2SD1616A Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 120 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 0.75 W
- DC Current Gain (hfe): 135 to 400
- Transition Frequency, min: 160 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Pinout of 2SD1616A
The 2SD1616A is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.
Classification of hFE
The 2SD1616A transistor can have a current gain of
135 to
400. The gain of the
2SD1616A-K will be in the range from
200 to
400, for the
2SD1616A-L it will be in the range from
135 to
270, for the
2SD1616A-U it will be in the range from
300 to
600.
Marking
Sometimes the "2S" prefix is not marked on the package - the 2SD1616A might only be marked "
D1616A".
Complementary PNP transistor
The complementary
PNP transistor to the 2SD1616A is the
2SB1116A.
SMD Version of 2SD1616A transistor
The
2SD1615A (SOT-89) is the SMD version of the 2SD1616A transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
2SD1616A Transistor in TO-92 Package
The
KSD1616A is the TO-92 version of the 2SD1616A.
Replacement and Equivalent for 2SD1616A transistor
You can replace the 2SD1616A with the
KSD1616A.
If you find an error please send an email to mail@el-component.com