2SD1272-P Bipolar Transistor

Characteristics of 2SD1272-P Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 200 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 800 to 2000
  • Transition Frequency, min: 25 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SD1272-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1272-P transistor can have a current gain of 800 to 2000. The gain of the 2SD1272 will be in the range from 500 to 2000, for the 2SD1272-Q it will be in the range from 500 to 1200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1272-P might only be marked "D1272-P".

Replacement and Equivalent for 2SD1272-P transistor

You can replace the 2SD1272-P with the 2SC4381, 2SC4382, 2SD402, 2SD772, 2SD772A, 2SD772B, 2SD792, 2SD792A, 2SD792B, BDX53F, MJE15030, MJE15030G, MJE15032, MJE15032G, MJE5740, MJF15030, MJF15030G, TIP150, TIP41F or TIP42F.
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