2SD1263A-P Bipolar Transistor

Characteristics of 2SD1263A-P Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 300 V
  • Collector-Base Voltage, max: 400 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.75 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 120 to 250
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SD1263A-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1263A-P transistor can have a current gain of 120 to 250. The gain of the 2SD1263A will be in the range from 40 to 250, for the 2SD1263A-Q it will be in the range from 70 to 150, for the 2SD1263A-R it will be in the range from 40 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1263A-P might only be marked "D1263A-P".

Replacement and Equivalent for 2SD1263A-P transistor

You can replace the 2SD1263A-P with the 2SC2898, 2SC3310, 2SC3794, 2SC3794A, 2SC3795, 2SC3795A, 2SC3868, 2SC4242, 2SC5241, BUX84, BUX85, MJE13070, MJE13071, MJE15034, MJE15034G, MJE16002 or MJE16004.
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