2SD1263A Bipolar Transistor
Characteristics of 2SD1263A Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 300 V
- Collector-Base Voltage, max: 400 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.75 A
- Collector Dissipation: 35 W
- DC Current Gain (hfe): 40 to 250
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220F
Pinout of 2SD1263A
Classification of hFE
Marking
Replacement and Equivalent for 2SD1263A transistor
If you find an error please send an email to mail@el-component.com