2SD1257-Q Bipolar Transistor

Characteristics of 2SD1257-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 130 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 90 to 180
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SD1257-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1257-Q transistor can have a current gain of 90 to 180. The gain of the 2SD1257 will be in the range from 60 to 260, for the 2SD1257-P it will be in the range from 130 to 260, for the 2SD1257-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1257-Q might only be marked "D1257-Q".

Replacement and Equivalent for 2SD1257-Q transistor

You can replace the 2SD1257-Q with the 2SD1257A or 2SD1257A-Q.
If you find an error please send an email to mail@el-component.com