2SD1257-Q Bipolar Transistor
Characteristics of 2SD1257-Q Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 130 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 7 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 90 to 180
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-252
Pinout of 2SD1257-Q
Classification of hFE
Marking
Replacement and Equivalent for 2SD1257-Q transistor
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