2SD1193 Bipolar Transistor

Characteristics of 2SD1193 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 70 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 70 W
  • DC Current Gain (hfe): 2000
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SD1193

Here is an image showing the pin diagram of this transistor.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1193 might only be marked "D1193".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1193 is the 2SB883.
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