2SB883 Bipolar Transistor

Characteristics of 2SB883 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -70 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 70 W
  • DC Current Gain (hfe): 2000
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB883

Here is an image showing the pin diagram of this transistor.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB883 might only be marked "B883".

Complementary NPN transistor

The complementary NPN transistor to the 2SB883 is the 2SD1193.
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