2SC5775 Bipolar Transistor
Characteristics of 2SC5775 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 160 V
- Collector-Base Voltage, max: 180 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 12 A
- Collector Dissipation: 130 W
- DC Current Gain (hfe): 60 to 160
- Transition Frequency, min: 15 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P
Pinout of 2SC5775
Marking
Complementary PNP transistor
Replacement and Equivalent for 2SC5775 transistor
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