2SC5099-P Bipolar Transistor

Characteristics of 2SC5099-P Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 6 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SC5099-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC5099-P transistor can have a current gain of 70 to 140. The gain of the 2SC5099 will be in the range from 50 to 180, for the 2SC5099-O it will be in the range from 50 to 100, for the 2SC5099-Y it will be in the range from 90 to 180.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SC5099-P might only be marked "C5099-P".

Complementary PNP transistor

The complementary PNP transistor to the 2SC5099-P is the 2SA1907-P.

SMD Version of 2SC5099-P transistor

The BDP953 (SOT-223) is the SMD version of the 2SC5099-P transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SC5099-P transistor

You can replace the 2SC5099-P with the 2SC2681, 2SC4886, 2SC4886-P, 2SC5100, 2SC5100-P, 2SC5101, 2SC5101-P, 2SD1486, 2SD1487, 2SD1488, 2SD1705, 2SD1706, 2SD1713, 2SD1714, 2SD1715, 2SD1716, FJAF4310 or FJAF4310O.
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