2SC503-GR Bipolar Transistor

Characteristics of 2SC503-GR Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.6 A
  • Collector Dissipation: 6 W
  • DC Current Gain (hfe): 100 to 300
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -65 to +175 °C
  • Package: TO-39

Pinout of 2SC503-GR

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC503-GR transistor can have a current gain of 100 to 300. The gain of the 2SC503 will be in the range from 30 to 300, for the 2SC503-O it will be in the range from 50 to 150, for the 2SC503-R it will be in the range from 30 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SC503-GR might only be marked "C503-GR".

Complementary PNP transistor

The complementary PNP transistor to the 2SC503-GR is the 2SA503-GR.

SMD Version of 2SC503-GR transistor

The 2SC3438 (SOT-89) is the SMD version of the 2SC503-GR transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SC503-GR transistor

You can replace the 2SC503-GR with the 2N3019 or 2N4033.
If you find an error please send an email to mail@el-component.com