2SA503-GR Bipolar Transistor

Characteristics of 2SA503-GR Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.6 A
  • Collector Dissipation: 6 W
  • DC Current Gain (hfe): 100 to 300
  • Transition Frequency, min: 130 MHz
  • Operating and Storage Junction Temperature Range: -65 to +175 °C
  • Package: TO-39

Pinout of 2SA503-GR

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA503-GR transistor can have a current gain of 100 to 300. The gain of the 2SA503 will be in the range from 30 to 300, for the 2SA503-O it will be in the range from 50 to 150, for the 2SA503-R it will be in the range from 30 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA503-GR might only be marked "A503-GR".

Complementary NPN transistor

The complementary NPN transistor to the 2SA503-GR is the 2SC503-GR.

SMD Version of 2SA503-GR transistor

The 2SB710A (SOT-23), DXT2907A (SOT-89), DZT2907A (SOT-223), FJX2907A (SOT-323), FMMT2907A (SOT-23), FMMT2907AR (SOT-23), FMMTA55 (SOT-23), KN2907AS (SOT-23), KST2907A (SOT-23), KST55 (SOT-23), KTN2907AS (SOT-23), KTN2907AU (SOT-323), MMBTA55 (SOT-23), MMST2907A (SOT-323), PMBT2907A (SOT-23), PMST2907A (SOT-23), PZTA55 (SOT-223) and SMBTA55 (SOT-23) is the SMD version of the 2SA503-GR transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA503-GR transistor

You can replace the 2SA503-GR with the 2N2905A or 2N4405.
If you find an error please send an email to mail@el-component.com