2SC3599-D Bipolar Transistor

Characteristics of 2SC3599-D Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 4 V
  • Collector Current − Continuous, max: 0.3 A
  • Collector Dissipation: 8 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 500 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SC3599-D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC3599-D transistor can have a current gain of 60 to 120. The gain of the 2SC3599 will be in the range from 40 to 320, for the 2SC3599-C it will be in the range from 40 to 80, for the 2SC3599-E it will be in the range from 100 to 200, for the 2SC3599-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SC3599-D might only be marked "C3599-D".

Complementary PNP transistor

The complementary PNP transistor to the 2SC3599-D is the 2SA1405-D.

Replacement and Equivalent for 2SC3599-D transistor

You can replace the 2SC3599-D with the 2SC2481, 2SC2481-R, 2SC2690, 2SC2690-R, 2SC2690A, 2SC2690A-R, 2SC3621, 2SC3621-R, 2SC3954, 2SC3954-D, 2SD600K, 2SD600K-D, 2SD669, 2SD669-B, 2SD669A, 2SD669A-B, KSC2690, KSC2690-R, KSC2690A, KSC2690A-R, MJE341, MJE344 or MJE344G.
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