2SC2922-G Bipolar Transistor

Characteristics of 2SC2922-G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 180 V
  • Collector-Base Voltage, max: 180 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 17 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 90 to 180
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: MT-200

Pinout of 2SC2922-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC2922-G transistor can have a current gain of 90 to 180. The gain of the 2SC2922 will be in the range from 30 to 180, for the 2SC2922-O it will be in the range from 30 to 60, for the 2SC2922-P it will be in the range from 70 to 140, for the 2SC2922-Y it will be in the range from 50 to 100.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SC2922-G might only be marked "C2922-G".

Complementary PNP transistor

The complementary PNP transistor to the 2SC2922-G is the 2SA1216-G.

Replacement and Equivalent for 2SC2922-G transistor

You can replace the 2SC2922-G with the 2SC3858 or 2SC3858-Y.
If you find an error please send an email to mail@el-component.com