2SA1216-G Bipolar Transistor

Characteristics of 2SA1216-G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -180 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -17 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 90 to 180
  • Transition Frequency, min: 40 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: MT-200

Pinout of 2SA1216-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1216-G transistor can have a current gain of 90 to 180. The gain of the 2SA1216 will be in the range from 30 to 180, for the 2SA1216-O it will be in the range from 30 to 60, for the 2SA1216-P it will be in the range from 70 to 140, for the 2SA1216-Y it will be in the range from 50 to 100.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1216-G might only be marked "A1216-G".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1216-G is the 2SC2922-G.

Replacement and Equivalent for 2SA1216-G transistor

You can replace the 2SA1216-G with the 2SA1494 or 2SA1494-Y.
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