2SB936-P Bipolar Transistor

Characteristics of 2SB936-P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -20 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 130 to 260
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SB936-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB936-P transistor can have a current gain of 130 to 260. The gain of the 2SB936 will be in the range from 90 to 260, for the 2SB936-Q it will be in the range from 90 to 180.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB936-P might only be marked "B936-P".

Replacement and Equivalent for 2SB936-P transistor

You can replace the 2SB936-P with the 2SB935, 2SB935-P, 2SB935A, 2SB935A-P, 2SB936A or 2SB936A-P.
If you find an error please send an email to mail@el-component.com