2SB935A-P Bipolar Transistor

Characteristics of 2SB935A-P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 130 to 260
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SB935A-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB935A-P transistor can have a current gain of 130 to 260. The gain of the 2SB935A will be in the range from 90 to 260, for the 2SB935A-Q it will be in the range from 90 to 180.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB935A-P might only be marked "B935A-P".

SMD Version of 2SB935A-P transistor

The 2STF2550 (SOT-89) and 2STN2550 (SOT-223) is the SMD version of the 2SB935A-P transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB935A-P transistor

You can replace the 2SB935A-P with the 2SB936A or 2SB936A-P.
If you find an error please send an email to mail@el-component.com