2SB935A-Q Bipolar Transistor

Characteristics of 2SB935A-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 90 to 180
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SB935A-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB935A-Q transistor can have a current gain of 90 to 180. The gain of the 2SB935A will be in the range from 90 to 260, for the 2SB935A-P it will be in the range from 130 to 260.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB935A-Q might only be marked "B935A-Q".

Replacement and Equivalent for 2SB935A-Q transistor

You can replace the 2SB935A-Q with the 2SB936A or 2SB936A-Q.
If you find an error please send an email to mail@el-component.com