2SB766 Bipolar Transistor

Characteristics of 2SB766 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 85 to 340
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SB766

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB766 transistor can have a current gain of 85 to 340. The gain of the 2SB766-Q will be in the range from 85 to 170, for the 2SB766-R it will be in the range from 120 to 240, for the 2SB766-S it will be in the range from 170 to 340.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB766 might only be marked "B766".

Complementary NPN transistor

The complementary NPN transistor to the 2SB766 is the 2SD874.

Replacement and Equivalent for 2SB766 transistor

You can replace the 2SB766 with the 2SB766A.
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