2SB755-O Bipolar Transistor

Characteristics of 2SB755-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 120 W
  • DC Current Gain (hfe): 80 to 160
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: MT-200

Pinout of 2SB755-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB755-O transistor can have a current gain of 80 to 160. The gain of the 2SB755 will be in the range from 55 to 160, for the 2SB755-R it will be in the range from 55 to 110.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB755-O might only be marked "B755-O".

Complementary NPN transistor

The complementary NPN transistor to the 2SB755-O is the 2SD845-O.

Replacement and Equivalent for 2SB755-O transistor

You can replace the 2SB755-O with the 2SA1076, 2SA1095, 2SA1095-O, 2SA1169, 2SA1187, 2SA1215, 2SA1216, 2SA1493 or 2SA1494.
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