2SB755 Bipolar Transistor

Characteristics of 2SB755 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 120 W
  • DC Current Gain (hfe): 55 to 160
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: MT-200

Pinout of 2SB755

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB755 transistor can have a current gain of 55 to 160. The gain of the 2SB755-O will be in the range from 80 to 160, for the 2SB755-R it will be in the range from 55 to 110.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB755 might only be marked "B755".

Complementary NPN transistor

The complementary NPN transistor to the 2SB755 is the 2SD845.

Replacement and Equivalent for 2SB755 transistor

You can replace the 2SB755 with the 2SA1095, 2SA1169, 2SA1187, 2SA1215, 2SA1216, 2SA1493 or 2SA1494.
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