2SB755 Bipolar Transistor
Characteristics of 2SB755 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -150 V
- Collector-Base Voltage, max: -150 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -12 A
- Collector Dissipation: 120 W
- DC Current Gain (hfe): 55 to 160
- Transition Frequency, min: 20 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: MT-200
Pinout of 2SB755
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SB755 transistor
If you find an error please send an email to mail@el-component.com