2SB705 Bipolar Transistor
Characteristics of 2SB705 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -140 V
- Collector-Base Voltage, max: -140 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -10 A
- Collector Dissipation: 120 W
- DC Current Gain (hfe): 40 to 200
- Transition Frequency, min: 17 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3
Pinout of 2SB705
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SB705 transistor
If you find an error please send an email to mail@el-component.com