2SB697-E Bipolar Transistor

Characteristics of 2SB697-E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -140 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 15 MHz
  • Operating and Storage Junction Temperature Range: -40 to +150 °C
  • Package: TO-3

Pinout of 2SB697-E

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB697-E transistor can have a current gain of 100 to 200. The gain of the 2SB697 will be in the range from 40 to 320, for the 2SB697-C it will be in the range from 40 to 80, for the 2SB697-D it will be in the range from 60 to 120, for the 2SB697-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB697-E might only be marked "B697-E".

Complementary NPN transistor

The complementary NPN transistor to the 2SB697-E is the 2SD733-E.

Replacement and Equivalent for 2SB697-E transistor

You can replace the 2SB697-E with the 2SA1072A, 2SA1073, 2SA908, 2SA909, 2SB697K, 2SB697K-E, 2SB722, 2SB723 or 2SB723-C.
If you find an error please send an email to mail@el-component.com