2SB560-G Bipolar Transistor

Characteristics of 2SB560-G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.7 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 280 to 560
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SB560-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB560-G transistor can have a current gain of 280 to 560. The gain of the 2SB560 will be in the range from 60 to 560, for the 2SB560-D it will be in the range from 60 to 120, for the 2SB560-E it will be in the range from 100 to 200, for the 2SB560-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB560-G might only be marked "B560-G".

Complementary NPN transistor

The complementary NPN transistor to the 2SB560-G is the 2SD438-G.
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