2SB555-O Bipolar Transistor
Characteristics of 2SB555-O Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -140 V
- Collector-Base Voltage, max: -140 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -12 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 70 to 140
- Transition Frequency, min: 6 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-3
Pinout of 2SB555-O
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SB555-O transistor
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