2SB555-O Bipolar Transistor

Characteristics of 2SB555-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -140 V
  • Collector-Base Voltage, max: -140 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 6 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of 2SB555-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB555-O transistor can have a current gain of 70 to 140. The gain of the 2SB555 will be in the range from 40 to 140, for the 2SB555-R it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB555-O might only be marked "B555-O".

Complementary NPN transistor

The complementary NPN transistor to the 2SB555-O is the 2SD425-O.

Replacement and Equivalent for 2SB555-O transistor

You can replace the 2SB555-O with the 2SA1072A, 2SA1073, 2SA908, 2SA909, 2SB554, 2SB554-O, 2SB697, 2SB697K, 2SB722, 2SB723, MJ15002, MJ15002G, MJ15004 or MJ15004G.
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