2SB503A Bipolar Transistor

Characteristics of 2SB503A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -10 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 30 to 280
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-66

Pinout of 2SB503A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB503A transistor can have a current gain of 30 to 280. The gain of the 2SB503A-O will be in the range from 50 to 140, for the 2SB503A-R it will be in the range from 30 to 70, for the 2SB503A-Y it will be in the range from 100 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB503A might only be marked "B503A".

Replacement and Equivalent for 2SB503A transistor

You can replace the 2SB503A with the 2SB502A.
If you find an error please send an email to mail@el-component.com