2SB1269-Q Bipolar Transistor
Characteristics of 2SB1269-Q Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -50 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -7 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 70 to 140
- Transition Frequency, min: 10 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-262
Pinout of 2SB1269-Q
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SB1269-Q transistor
If you find an error please send an email to mail@el-component.com