2SB1121-U Bipolar Transistor

Characteristics of 2SB1121-U Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 280 to 560
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SB1121-U

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1121-U transistor can have a current gain of 280 to 560. The gain of the 2SB1121 will be in the range from 100 to 560, for the 2SB1121-R it will be in the range from 100 to 200, for the 2SB1121-S it will be in the range from 140 to 280, for the 2SB1121-T it will be in the range from 200 to 400.

Marking

The 2SB1121-U transistor is marked as "BDU".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1121-U is the 2SD1621-U.

Replacement and Equivalent for 2SB1121-U transistor

You can replace the 2SB1121-U with the 2SB1123, 2SB1123-U, 2SB1124, 2SB1124-U or 2STF2340.
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