2SB1121-R Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -25 V
• Collector-Base Voltage, max: -30 V
• Emitter-Base Voltage, max: -6 V
• Collector Current − Continuous, max: -2 A
• Collector Dissipation: 0.5 W
• DC Current Gain (h_fe): 100 to 200
• Transition Frequency, min: 150 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: SOT-89

Here is an image showing the pin diagram of this transistor.The 2SB1121-R transistor can have a current gain of 100 to 200. The gain of the 2SB1121 will be in the range from 100 to 560, for the 2SB1121-S it will be in the range from 140 to 280, for the 2SB1121-T it will be in the range from 200 to 400, for the 2SB1121-U it will be in the range from 280 to 560.The 2SB1121-R transistor is marked as "BDR".The complementary NPN transistor to the 2SB1121-R is the 2SD1621-R.You can replace the 2SB1121-R with the 2DA1213, 2SA1213, 2SB1123, 2SB1123-R, 2SB1124 or 2SB1124-R.